Electronic device

ABSTRACT

An electronic device is disclosed, the electronic device includes a substrate, a first auxiliary electrode formed on the substrate, an organic layer formed on the first auxiliary electrode, a first inorganic layer formed on the organic layer, a plurality of thin film transistors formed on the first inorganic layer, and a plurality of electronic units electrically connected to the plurality of thin film transistors, wherein the first auxiliary electrode is electrically connected to at least two of the plurality of electronic units.

BACKGROUND OF THE DISCLOSURE 1. Field of the Disclosure

The present disclosure relates to an electronic device, and moreparticularly to an electronic device having uniform brightness.

2. Description of the Prior Art

The electronic devices are widely used, but the brightness of theelectronic device is not uniform as the size or resolution is enhanced,and therefore the quality of the electronic device is diminished. Thus,this problem needs to be reduced.

SUMMARY OF THE DISCLOSURE

According to an embodiment, the present disclosure provides anelectronic device including a substrate, a first auxiliary electrodeformed on the substrate, an organic layer formed on the first auxiliaryelectrode, a first inorganic layer formed on the organic layer, aplurality of thin film transistors formed on the first inorganic layer,and a plurality of electronic units electrically connected to theplurality of thin film transistors, wherein the first auxiliaryelectrode is electrically connected to at least two of the plurality ofelectronic units.

These and other objectives of the present disclosure will no doubtbecome obvious to those of ordinary skill in the art after reading thefollowing detailed description of the embodiment that is illustrated inthe various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a top view of an electronic deviceaccording to a first embodiment of the present disclosure.

FIG. 2 is a schematic diagram showing a cross-sectional view of anelectronic device according to the first embodiment of the presentdisclosure.

FIG. 3 is a schematic diagram showing a top view of the first auxiliaryelectrode according to another embodiment of the present disclosure.

FIG. 4 is a schematic diagram showing a top view of an electronic deviceaccording to a second embodiment of the present disclosure.

FIG. 5 is a schematic diagram showing a cross-sectional view of anelectronic device according to the second embodiment of the presentdisclosure.

FIG. 6 is a schematic diagram showing a cross-sectional view of anelectronic device according to the third embodiment of the presentdisclosure.

FIG. 7 is a schematic diagram showing a cross-sectional view of anelectronic device according to the fourth embodiment of the presentdisclosure.

FIG. 8 is a schematic diagram showing a cross-sectional view of anelectronic device according to the fifth embodiment of the presentdisclosure.

FIG. 9 is a schematic diagram showing a cross-sectional view of anelectronic device according to the sixth embodiment of the presentdisclosure.

FIG. 10 is a schematic diagram showing a cross-sectional view of anelectronic device according to the seventh embodiment of the presentdisclosure.

FIG. 11 is a schematic diagram showing a cross-sectional view of anelectronic device according to the eighth embodiment of the presentdisclosure.

FIG. 12 is a schematic diagram showing a cross-sectional view of anelectronic device according to the ninth embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure may be understood by reference to the followingdetailed description, taken in conjunction with the drawings asdescribed below. It is noted that, for purposes of illustrative clarityand being easily understood by the readers, various drawings of thisdisclosure show a portion of an electronic device (i.e. a display devicein this disclosure), and certain elements in various drawings may not bedrawn to scale. In addition, the number and dimension of each deviceshown in drawings are only illustrative and are not intended to limitthe scope of the present disclosure.

Certain terms are used throughout the description and following claimsto refer to particular components. As one skilled in the art willunderstand, electronic equipment manufacturers may refer to a componentby different names. This document does not intend to distinguish betweencomponents that differ in name but not function. In the followingdescription and in the claims, the terms “include”, “comprise” and“have” are used in an open-ended fashion, and thus should be interpretedto mean “include, but not limited to . . . ”. Thus, when the terms“include”, “comprise” and/or “have” are used in the description of thepresent disclosure, the corresponding features, areas, steps, operationsand/or components would be pointed to existence, but not limited to theexistence of one or a plurality of the corresponding features, areas,steps, operations and/or components.

It will be understood that when an element or layer is referred to asbeing “(electrically) connected to” another element or layer, it can bedirectly (electrically) connected to the other element or layer, orintervening elements or layers may be presented. In contrast, when anelement is referred to as being “directly (electrically) connected to”another element or layer, there are no intervening elements or layerspresented. In contrast, when an element is referred to as being“disposed on” or “formed on” A element, it may be directly disposed on(or formed on) A element, or may be indirectly disposed on (or formedon) A element through other component. In contrast, when an element isreferred to as being “disposed between” A element and B element, it maybe directly disposed between A element and B element, or may beindirectly disposed between A element and B element through othercomponent.

The terms “about”, “substantially”, “equal”, or “same” generally meanwithin 20% of a given value or range, or mean within 10%, 5%, 3%, 2%,1%, or 0.5% of a given value or range.

In addition, the phrase “in a range from a first value to a secondvalue” indicates the range includes the first value, the second value,and other values in between.

Although terms such as first, second, third, etc., may be used todescribe diverse constituent elements, such constituent elements are notlimited by the terms. The terms are used only to discriminate aconstituent element from other constituent elements in thespecification. The claims may not use the same terms, but instead mayuse the terms first, second, third, etc. with respect to the order inwhich an element is claimed. Accordingly, in the following description,a first constituent element may be a second constituent element in aclaim.

It should be noted that the technical features in different embodimentsdescribed in the following can be replaced, recombined, or mixed withone another to constitute another embodiment without departing from thespirit of the present disclosure.

It will be understood that when “A element is electrically connected tothe thin film transistor” or “A element is electrically connected to theB element through the thin film transistor”, which may be in a conditionthat the thin film transistor is turned on.

In the present disclosure, the electronic device may include a LED(light-emitting diode) display, a micro-LED display, a mini-LED display,an OLED (organic light-emitting diode) display, a quantum dots LEDs(QLEDs or QD-LEDs) display, a fluorescence display, a phosphor display,a flexible display, other suitable displays, or a combination thereof,but not limited thereto.

Referring to FIG. 1 to FIG. 2, FIG. 1 is a schematic diagram showing atop view of an electronic device according to a first embodiment of thepresent disclosure, and FIG. 2 is a schematic diagram showing across-sectional view of an electronic device along the cross-sectionalline A-A′ shown in FIG. 1. As shown in FIG. 1 and FIG. 2, an electronicdevice 10 includes a substrate 200 and a light emitting structure 100disposed on the substrate 200. The substrate 200 may include a rigidsubstrate or a flexible substrate, wherein the substrate may include aglass substrate, a plastic substrate, a quartz substrate, a sapphiresubstrate, a polyimide (PI) substrate, a polyethylene terephthalate(PET) substrate, other suitable substrate, or a combination thereof, butnot limited thereto.

In some embodiments, the light emitting structure 100 is formed on thesubstrate 200, but the light emitting structure 100 does not directlycontact the substrate 200, other elements (such as an organic layer 300and a first auxiliary electrode AE1, it will be described in detaillater) may be formed between the light emitting structure 100 and thesubstrate 200. The light emitting structure 100 may include a pluralityof electronic units EU, a circuit layer structure CL, wherein theplurality of electronic units EU are disposed on or formed on thecircuit layer structure CL, the circuit layer structure CL may includewires (such as scan lines, data lines or other wires), thin filmtransistors TFT (such as switch elements, driving elements, resetelements and/or compensating elements), but not limited thereto. In someembodiments, the electronic device may include a plurality of sub-pixels108, the sub-pixel 108 may include the corresponding electric unit EU,the electric units EU can emit light, and different electric units EU indifferent sub-pixels 108 can emit light with different colors (such asred light, blue light or green light). In some embodiments, thedifferent electric units EU can emit the same color lights (such aswhite light and/or UV light), the light conversion layers (not shown)may be disposed on the electric units EU, and the light conversionlayers may convert or filter the white light (or UV light) to red light,green light, blue light or the light with any other suitable wavelength.The material of the light conversion layers may include quantum dots,color filter, phosphorescent materials or any other suitable material,but not limited thereto. In some embodiments, the sub-pixel 108 mayinclude at least one corresponding electronic unit EU and at least onecorresponding thin film transistor TFT electrically connected to thecorresponding electronic units EU.

In some embodiments (FIG. 1 and FIG. 2), the circuit layer structure CLis disposed on or formed on the substrate 200, and the electronic unitsEU and/or the pixel defining layer PDL are disposed on or formed on thecircuit layer structure CL, and the pixel defining layer PDL may beconfigured to separate the electronic units EU from each other. Indetail, the circuit layer structure CL may include at least oneconductive layer(s), at least one insulating layer(s) and/or at leastone semiconductor layer(s) to form different electronic components (suchas wires, thin film transistors, capacitor or other suitablecomponents), and the electronic units EU are electrically connected toat least one of the thin film transistors respectively.

In some embodiments (FIG. 1 and FIG. 2), the circuit layer structure CLmay include a first insulating layer IN1, a second insulating layer IN2,a third insulating layer IN3, a semiconductor layer SC, a firstconductive layer forming the gate electrodes GE and/or scan lines (notshown), a second conductive layer forming the source electrodes SE, thedrain electrodes DE and/or data lines (not shown), but it is not limitedthereto. A thin film transistor TFT may include a source electrode SE, adrain electrodes DE, a gate electrode GE and a channel layer CHL. Thesource electrode SE of the thin film transistor TFT (such as drivingelement) may be electrically connected to a power supply line VDL (suchas VSS or ground, but it is not limited) through the first auxiliaryelectrode AE1, but it is not limited thereto. The drain electrode DE ofthe thin film transistor TFT (such as driving element) may beelectrically connected to a power supply line VDL (such as VDD, but itis not limited thereto). In some embodiments, the position of the drainelectrode DE may be exchanged with the position of the source electrodeSE. In some embodiments, the thin film transistor TFT may include abottom gate transistor, a top gate transistor, a double gate transistor,a dual gate transistor, other suitable transistor or combinationthereof, but not limited thereto. The type of the thin film transistorTFT and the disposition of the components may be adjusted according torequirements.

The material of the conductive layers (such as the gate electrode GE,the source electrode SE and the electrode drain DE) in the circuit layerstructure CL may include metal or transparent conductive material,wherein the transparent conductive material can include indium tin oxide(ITO), indium zinc oxide (IZO), any other suitable conductive materialor a combination thereof, but it is not limited thereto. The material ofthe insulating layers (such as the first insulating layer IN1, thesecond insulating layer IN2, the third insulating layer IN3) in thecircuit layer may include silicon oxide, silicon nitride, siliconoxynitride, any other suitable insulating material or a combinationthereof, but it is not limited thereto. The material of thesemiconductor layer SC may include low temperature poly-silicon (LTPS),indium gallium zinc oxide (IGZO), amorphous silicon (a-Si) and/or anyother suitable semiconductor material or combination thereof, but notlimited thereto. The material of the pixel defining layer PDL mayinclude any suitable insulating material. In some embodiments (FIG. 1),the pixel defining layer PDL includes a plurality of openings to definedifferent sub-pixels 108.

The electronic units EU may include an inorganic light emitting diode(LED), a micro-LED, a mini-LED, an organic light-emitting diode (OLED),any other suitable light-emitting component, or a combination thereof,but not limited thereto, but not limited thereto. The present disclosureuses the LED (such as micro-LED or mini-LED) to serve as the electronicunits EU for explanation, but the electronic units EU may be other typeof light-emitting components. In some embodiments, the electronic unitsEU may include a first electrode 150, a second electrode 152, a firstsemiconductor layer 154, alight emitting layer 156, and a secondsemiconductor layer 158. In some embodiments, the material of the firstelectrode 150 or the second electrode 152 may include metal and/ortransparent conductive material.

In some embodiments, the first electrode 150 may be an anode electrodethat may be electrically connected to a pixel electrode 160 through aconductive pad CP1, and the first electrode 150 may be electricallyconnected to the source electrode SE of a thin film transistor TFT (suchas driving element), but it is not limited thereto. In some embodiments,the position of the drain electrode DE may be exchanged with theposition of the source electrode SE. In some embodiments, the secondelectrode 152 may be a cathode electrode, and the second electrode 152may be electrically connected to a common electrode 162 through aconductive pad CP2, and the common electrode 162 may be provided with afirst voltage (such as common voltage) through the first auxiliaryelectrode AE1, and the first auxiliary electrode AE1 will be describedmore detail in the following paragraphs. In some embodiments, the firstelectrode 150 may be a cathode electrode, and the second electrode 152may be an anode electrode. In some embodiments (FIG. 2), at least twoelectronic units EU are electrically connected to each other through aconnection electrode CE. In some embodiments, the connection electrodeCE may electrically connected to at least two electronic units EU, andthe common electrode 162 may electrically connected with the electronicunits EU and the connection electrode CE. In some embodiments (FIG. 2),the connection pads 112 and/or the conductive via 114 may beelectrically connected to the connection electrode CE and the commonelectrodes 162 for electrically connecting at least two electronic unitsEU to the connection electrode CE. It should be noted that theconductive via may be a via filled with conductive materials.

In some embodiments (FIG. 2) the electronic device 10 may include aprotection layer 106 disposed on the electronic units EU, and/or aplanarization layer 110 selectively disposed between the electronicunits EU and the circuit layer structure CL, but it is not limitedthereto. The protection layer 106 may include an insulating materiallayer, other suitable materials or combination thereof, but not limitedthereto. In some embodiments, the planarization layer 110 may be anorganic layer, such as a polyimide (PI), a polycarbonate (PC), acrylate,other suitable materials or combination thereof, but not limitedthereto. In some embodiments, the protection layer 106 can be replacedby a cover layer (not shown). In some embodiments, an anti-refectionlayer (not shown) and/or a touch layer (not shown) may be disposed onthe electronic units EU.

It should be noted that, the electronic units EU may include antennaunits, sensor units, light emitting units, display units, other suitableunits or a combination thereof, but it is not limited thereto.

In a conventional display device, the resistance of the power lineelectrically connected with the electronic units EU may be high, so thelight emitted from two different electronic units EU may have differentlight intensities, or the brightness uniformity may reduce.

To reduce the issues mentioned above, in the present disclosure, anauxiliary electrode (such as first auxiliary electrode AE1) is formedbetween the substrate 200 and the circuit layer structure CL, and theauxiliary electrode (such as first auxiliary electrode AE1) transmits aconstant voltage to at least two of the plurality of electronic unitsthrough the connection electrode CE and/or the common electrode 162, andthe non-uniformity of the brightness of the electronic device may bereduced.

In some embodiments, a first auxiliary electrode AE1 is disposed on orformed on the substrate 200, and the organic layer 300 is formed on thefirst auxiliary electrode AE1, and the first auxiliary electrode AE1 isdisposed between the substrate 200 and the first insulating layer IN1. Aconductive via 302 is disposed in the organic layer 300 and electricallyconnected to the first auxiliary electrode AE1 and the connectionelectrode CE, but it is not limited thereto. In other words, theconductive via 302 may penetrate the organic layer 300, the firstinsulating layer IN1 and/or the second insulating layer IN2 toelectrically connect the at least two of the electronic units EU (suchas two adjacent ones of the electronic units EU, but it is not limitedthereto) and the first auxiliary electrode AE1 shown in FIG. 2. In someembodiments, the organic layer 300 may include polyimide (PI) layer orother suitable organic layers, but it is not limited thereto. In someembodiments, the thickness of the organic layer 300 can be in a rangefrom 10 μm to 50 μm (10 μm≤thickness≤50 μm), but not limited thereto. Insome embodiments, the thickness of the organic layer 300 can be in arange from 10 μm to 30 μm (10 μm≤thickness≤30 μm). In some embodiments,the thickness of the organic layer 300 can be in a range from 20 μm to40 μm (20 μm≤thickness≤40 μm). In some embodiments (FIG. 2), at leastpart of the organic layer 300 directly contacts the substrate 200. Insome embodiments, the first insulating layer IN1 may include aninorganic layer, such as a silicon oxide layer, a silicon nitride layer,other suitable materials or a combination thereof, but not limitedthereto. The first insulating layer IN1 may be disposed between the thinfilm transistors TFT and the first auxiliary electrode AE1.

In some embodiments, the first auxiliary electrode comprises a materialselected from a group consisting of Cu, Ag, Au and other suitablematerial. In some embodiments, the material of the first auxiliaryelectrode AE1 includes conductive materials, for example Cu, Ag, Au,other suitable materials or a combination thereof, but not limitedthereto. In some embodiments, a thickness of the first auxiliaryelectrode AE1 can be in a range from 1 μm to 6 μm (1 μm≤thickness≤6 μm),but not limited thereto. In some embodiments, the thickness of the firstauxiliary electrode AE1 can be in a range from 3 μm to 6 μm (3μm≤thickness≤6 μm). The first auxiliary electrode AE1 can provide ortransmit a first voltage (e.g. constant voltage) to at least two of theelectronic units EU through the connection electrode CE. In the presentdisclosure, the constant voltage may be defined by measuring the voltageat a same position of the auxiliary electrode (such as first auxiliaryelectrode AE1) within 30 frames, and the variation of the voltage islower than ±3%, but not limited thereto. In some embodiments, the commonvoltage may be same as the first voltage.

It is worth noting that, one of the plurality of thin film transistorsTFT comprises a channel layer CHL formed of the semiconductor layer SC.In some embodiments, the channel layer CHL may be defined as a portionof the semiconductor layer SC overlapping the corresponding gateelectrode GE. In some embodiments (FIG. 2), the channel layer CHL may benot overlapped with the first auxiliary electrode AE1 in a normaldirection ND of the surface of the substrate 200. In some embodiments,as shown in FIG. 1, the thin film transistor TFT does not overlappedwith the first auxiliary electrode AE1 in the normal direction ND of thesurface of the substrate 200 for reducing the impact from thecapacitances.

The channel layer CHL in the thin film transistor TFT does not overlapwith the first auxiliary electrode AE1. The organic layer 300 disposedon the first auxiliary electrode AE1 may provide a flatter surface forforming the circuit layer structure CL.

The electronic device of the present disclosure is not limited to theabove mentioned embodiment. Further embodiments or variant embodimentsof the present disclosure are described below. It should be noted thatthe technical features in different embodiments described can bereplaced, recombined, or mixed with one another to constitute anotherembodiment without departing from the spirit of the present disclosure.For making it easier to compare the difference between the embodimentsand variant embodiments, the following description will detail thedissimilarities among different variant embodiments or embodiments andthe identical features will not be redundantly described.

In the first embodiment (FIG. 1) mentioned above, the shape of the firstauxiliary electrode AE1 may include rectangle shape or line shape in thenormal direction ND of the surface of the substrate 200, and the firstauxiliary electrode AE1 may extend along a direction D1, but not limitedthereto. In some embodiments, the direction D1 may be an extinctiondirection of the data line (not shown) or an extinction direction of thepower supply line VDL, but not limited thereto. In some embodiments, thefirst auxiliary electrode AE1 can be provided with a first voltage (suchas constant voltage), and the first voltage may be providing ortransmitting by a voltage supper (not shown) or a circuit board (notshown). However, in other embodiments, the shape of the first auxiliaryelectrode AE1 can be adjusted according to demand. For example, FIG. 3is a schematic diagram showing a top view of the first auxiliaryelectrode AE1 according to another embodiment of the present disclosure.In order to simplify the illustration, only the first auxiliaryelectrode AE1 and the substrate 200 are shown in FIG. 3, and othercomponents are omitted from the figure. As shown in FIG. 3, the shape ofa first auxiliary electrode AE1′ may include mesh shape. In someembodiments, the shape of the first auxiliary electrode AE′ in thenormal direction ND of the surface of the substrate 200 may includeround shape, arc shape, rectangle shape with curved corners, mesh shape,line shape, other suitable shapes or a combination thereof, but notlimited thereto.

FIG. 4 is a schematic diagram showing a top view of an electronic deviceaccording to a second embodiment of the present disclosure, FIG. 5 is aschematic diagram showing a cross-sectional view of an electronic deviceaccording to the second embodiment of the present disclosure. As shownin FIG. 4, the difference between the first embodiment and the secondembodiment is that, at least one second auxiliary electrode AE2 isdisposed on or formed on the substrate 200, and the at least one secondauxiliary electrode AE2 is electrically connected to at least one of theelectronic units through the corresponding thin film transistor TFTand/or the conductive via 304. More detail, as shown in FIG. 5, thesecond auxiliary electrode AE2 may be disposed on the substrate 200, andthe second auxiliary electrode AE2 may be disposed between the substrate200 and the organic layer 300. A conductive via 304 may be formed in theorganic layer 300, and the conductive via 304 is electrically connectedto the second auxiliary electrode AE2 and the thin film transistor TFT(such as a drain electrode DE in the thin film transistor TFT, but notlimited thereto). In some embodiments, the second auxiliary electrodeAE2 (not shown) is provided with a second voltage (such as a constantvoltage), and the second voltage may be provided or transmitted by avoltage supper (not shown) or a circuit board (not shown). Then, thesecond auxiliary electrode AE2 may provide the second voltage to theelectronic units E. The second auxiliary electrode AE2 may provide thesecond voltage to the electronic units E through the thin filmtransistors TFT and the pixel electrode 160. In some embodiments, thefirst voltage can be different from the second voltage. For example, thesecond voltage and the first voltage may have different potentials, suchas positive potential, negative potential or ground potential. In someembodiments (not shown), the at least one second auxiliary electrode AE2is electrically connected to at least two of the electronic unitsthrough the corresponding thin film transistor TFT, and/or thecorresponding conductive via 304. In some embodiments, the secondauxiliary electrode AE2 may be electrically connected to a power supplyline VDL (such as VDD), and the first auxiliary electrode AE1 beelectrically connected to a power supply line VDL (such as VSS), but itis not limited thereto.

In some embodiments, the shape of the second auxiliary electrodes AE2can be adjusted according to actual requirements. In some embodiments,the shape of the second auxiliary electrodes AE2 may include roundshape, arc shape, rectangle shape with curved corners, mesh shape, lineshape, other suitable shapes or a combination thereof, but not limitedthereto. However, it should be noted that, the second auxiliaryelectrodes AE2 need to be electrically insulated from the firstauxiliary electrodes AE1. In some embodiments (not shown), the secondauxiliary electrodes AE2 may electrically connected to at least twoelectronic units EU.

FIG. 6 is a schematic diagram showing a cross-sectional view of anelectronic device according to the third embodiment of the presentdisclosure. As shown in FIG. 6, the difference between the firstembodiment and third embodiment is that, a second inorganic layer 306(such as a buffer layer) is further disposed on or formed on thesubstrate 200, and the second inorganic layer 306 may cover the firstauxiliary electrodes AE1 and/or the second auxiliary electrodes AE2. Insome embodiments, the second inorganic layer 306 may be disposed betweenthe substrate 200 and the organic layer 300. In some embodiments, thematerial of the second inorganic layer 306 may include inorganicmaterial or organic material or a combination thereof, but not limitedthereto. The material of the second inorganic layer 306 may includepolyimide, silicon oxide, silicon nitride, silicon oxynitride polyimideother suitable materials, or a combination thereof, but not limitedthereto.

The conductive via 302 and/or the conductive via 304 may penetrate thesecond inorganic layer 306 and/or the organic layer 300 to electricallyconnect the first auxiliary electrodes AE1 and/or the second auxiliaryelectrodes AE2 respectively. A better adhesion is between the secondinorganic layer 306 and the substrate 200, and the second inorganiclayer 306 may be used as an adhesion layer between the organic layer 300and the substrate 200, or the second inorganic layer 306 can reduce theatomic diffusion from the auxiliary electrode (AE1, AE2) tosemiconductor layer SC in a high temperature process environment, orincrease the yield of the electronic device.

FIG. 7 is a schematic diagram showing a cross-sectional view of anelectronic device according to the fourth embodiment of the presentdisclosure. In this embodiment, the second inorganic layer 306′ can bedisposed under or formed under the first auxiliary electrodes AE1 and/orthe second auxiliary electrodes AE2. In this embodiment, the secondinorganic layer 306′ can be disposed between or formed between theauxiliary electrodes (such as the first auxiliary electrode AE1 and/orthe second auxiliary electrode AE2) and the substrate 200.

FIG. 8 is a schematic diagram showing a cross-sectional view of anelectronic device according to the fifth embodiment of the presentdisclosure. In this embodiment, the substrate 200′ can be a flexiblesubstrate, and the flexible substrate 200′ may include glass havingthinner thickness, copper foil, polyimide (PI), polyethyleneterephthalate (PET), polycarbonate (PC), polyethylene naphthalate (PEN),triacetate (TAC), epoxy resin, other suitable materials or combinationsthereof. In some embodiments, a carrier substrate 400 is provided, andthe substrate 200′ and other components (such as the auxiliaryelectrodes, the thin film transistors and the electronic units, but notlimited thereto) are disposed on or formed on the carrier substrate 400.The carrier substrate 400 is removed from the substrate 200′ afterdisposing the above components, and the carrier substrate 400 may beremoved by a lift-off process (such as a laser lift-off process P1 shownin FIG. 8) or other suitable methods. In some embodiments, the carriersubstrate 400 may include a rigid substrate, and the material of therigid carrier substrate 400 may include glass or other suitablematerials.

FIG. 9 is a schematic diagram showing a cross-sectional view of anelectronic device according to the sixth embodiment of the presentdisclosure. In those embodiments mentioned above, the electronic unitsmay include a flip-type LED (such as micro LED or mini LED) as anexample. Compared with those embodiments mentioned above, the electronicunit EU1 may be a vertical-type LED (such as micro LED or mini LED) insixth embodiment, but not limited thereto. In this embodiment, thecommon electrode 163 may contact or electrically connected to a secondelectrode 152 (such as cathode electrode) in the electronic unit EU1. Inthis embodiment, the first electrode 150 (such as anode electrode) maybe electrically connected to the pixel electrode 160 through aconductive pad CP3, and the first electrode 150 may be electricallyconnected to the source electrode SE of a thin film transistor TFT (suchas driving element), but it is not limited thereto. In some embodiments,the position of the drain electrode DE may be exchanged with theposition of the source electrode SE. In some embodiments, a secondprotection layer 180 is disposed on (or cover) the electronic unit EU1.

FIG. 10 is a schematic diagram showing a cross-sectional view of anelectronic device according to the seventh embodiment of the presentdisclosure. In this embodiment, the electronic unit EU2 can includeOLED. The electronic unit EU2 includes a corresponding first electrode173, a corresponding portion of a second electrode layer 176 and acorresponding light emitting layer 174 disposed between the firstelectrode 173 and the second electrode layer 176. In this embodiment,the conductive via 302 is disposed in the organic layer 300, theconductive via 302 may be electrically connected to the first auxiliaryelectrode AE1 and the connection electrode CE, but it is not limitedthereto.

In some embodiments (FIG. 10), the connection pads 112 and/or theconductive via 114 may be electrically connect to the connectionelectrode CE and the common electrodes 162 for electrically connectingat least two electronic units EU2 to the connection electrode CE,wherein the second electrode layer 176 is electrically connecting to thecommon electrodes 162, but it is not limited thereto.

FIG. 11 is a schematic diagram showing a cross-sectional view of anelectronic device according to the eighth embodiment of the presentdisclosure. In this embodiment, the electronic device can be tiledelectronic device. As shown in FIG. 11, an electronic device 10 and asecond electronic device 20 are provided, and the electronic device 10is tiled with the second electronic device 20 through a connectingmember 30, but it is not limited thereto. It is noteworthy that theelectronic device 10 and the electronic device 20 can be replaced by anyelectronic device that mentioned in each embodiment above, theelectronic device 10 and the second electronic device 20 may have thesame structure or may have different structures. The connecting member30 is used for connecting the electronic device 10 with the secondelectronic device 20. The connecting member 30 may include a conductivematerials or non-conductive materials, such as a glue layer or theanisotropic conductive film (ACF), other suitable materials or acombination thereof, but it is not limited thereto. In other words, theconnecting member 30 is disposed between the substrate 200 and thesubstrate 220 in the normal direction ND of the surface of the substrate200. In addition, the substrate 200 in the electronic device 10 and/orthe substrate 220 in the electronic device 20 may include flexiblesubstrate, but it is not limited thereto, the substrate 100 and/or thesubstrate 200 can also include the rigid substrate. In some embodiments(FIG. 11), the first auxiliary electrode AE1 is formed on the substrate200 (and/or the substrate 220). In some embodiments, part of the firstauxiliary electrode AE1 formed on the substrate 200 (and/or thesubstrate 220) is bended. In some embodiments, part of the substrate 200(and/or the substrate 220) may be bended and overlapped with the otherpart of the substrate 200 (and/or the substrate 220) in the normaldirection ND of the surface of the substrate 200. In some embodiments,the first auxiliary electrodes AE1 in the electronic device 10 (and/orthe electronic device 20) may be electrically connect to a circle boardCB. In some embodiments, the circle board CB may include printed circuitboard (PCB), printed flexible circuit (FPC), other suitable circuitboard or combination thereof, but not limited thereto. In addition, thefirst auxiliary electrode AE1 in the electronic device 10 and the firstauxiliary electrode AE1 in the electronic device 20 have the samepotential. In some embodiments, the first protection layer 106-1 may bedisposed to cover the electronic unit EU in the electronic device 10 andat least part of the first auxiliary electrode AE1 in the electronicdevice 10. In some embodiments, the first protection layer 106-2 may bedisposed to cover the electronic unit EU in the electronic device 20 andat least part of the first auxiliary electrode AE1 in the electronicdevice 20.

FIG. 12 is a schematic diagram showing a cross-sectional view of anelectronic device according to the ninth embodiment of the presentdisclosure. In this embodiment, the electronic device can be a tiledelectronic device. As shown in FIG. 12, the difference between theeighth embodiment (FIG. 11) and ninth embodiment is that, the electronicdevice 10 includes the first auxiliary electrode AE1 and the secondauxiliary electrodes AE2, and the electronic device 20 includes thefirst auxiliary electrode AE1 and second auxiliary electrodes AE2, andthe first auxiliary electrode AE1 and second auxiliary electrode AE2 issimilar to the above the first auxiliary electrode AE1 and secondauxiliary electrode AE2 shown in FIG. 7. In this embodiment, part of thesecond auxiliary electrode AE2 formed on the substrate 200 (and/or thesubstrate 220) and part of the substrate 200 (and/or the substrate 220)may be bended, and the second auxiliary electrode AE2 in the electronicdevice 10 and the second auxiliary electrode AE2 in the electronicdevice 20 may be electrically connected to a circle board CB, but notlimited thereto

In another embodiment of the present disclosure, two or more electronicdevices are tiled with each other, and the electronic devices may havethe first auxiliary electrode AE1 and/or the second auxiliary electrodeAE2. In another embodiment, two electronic devices with differentstructures can be tiled with each other, for example, one of theelectronic devices has the first auxiliary electrode AE1 and the secondauxiliary electrode AE2, and another electronic device has the firstauxiliary electrode AE1 but does not have the second auxiliary electrodeAE2. It should also be within the scope of the present disclosure.

Although the disclosed embodiments and their advantages have beendisclosed above, it should be understood that any person having ordinaryknowledge in the art can make changes, substitutions and alterationswithout departing from the spirit and scope of the present disclosure.In addition, the scope of protection of the present disclosure is notlimited to the processes, machines, manufacturing, materialcompositions, devices, methods, and steps in the specific embodimentsdescribed in the specification. Any process, machine, manufacturing,material compositions, devices, methods, and steps developed currentlyor in the future can be understood by those of ordinary skill in the artfrom the present disclosure, as long as substantially the same functionscan be implemented or substantially the same results can be obtained inthe embodiments described herein. Therefore, the scope of protection ofthe present disclosure includes the above processes, machines,manufacturing, material composition, devices, methods and steps. Inaddition, each patent application scope constitutes a separateembodiment, and the scope of protection disclosed in this disclosurealso includes each patent application scope and combination ofembodiments. The scope of protection disclosed herein shall be asdefined in the appended patent application.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An electronic device, comprising: a substrate; afirst auxiliary electrode and a second auxiliary electrode formed on thesubstrate; an organic layer formed on the first auxiliary electrode; aplurality of thin film transistors formed on the organic layer; and aplurality of electronic units electrically connected to the plurality ofthin film transistors; wherein the plurality of electronic unitscomprises a first electronic unit corresponding to a sub-pixel, a secondelectronic unit corresponding to another sub-pixel, the first auxiliaryelectrode and the second auxiliary electrode are electrically connectedto the first electronic unit and the second electronic unit; wherein thesecond auxiliary electrode is electrically insulate from the firstauxiliary electrode.
 2. The electronic device of claim 1, wherein thefirst auxiliary electrode transmits a constant voltage to the firstelectronic unit and the second electronic unit.
 3. The electronic deviceof claim 1, further comprising an inorganic layer formed between thefirst auxiliary electrode and the substrate.
 4. The electronic device ofclaim 1, further comprising an inorganic layer formed between the firstauxiliary electrode and the organic layer.
 5. The electronic device ofclaim 1, wherein a thickness of the organic layer ranges from 10 μm to50 μm.
 6. The electronic device of claim 1, wherein one of the pluralityof thin film transistors comprises a channel layer not overlapped withthe first auxiliary electrode in a normal direction of a surface of thesubstrate.
 7. The electronic device of claim 6, wherein the one of theplurality of thin film transistors is a driving element.
 8. Theelectronic device of claim 1, wherein a thickness of the first auxiliaryelectrode ranges from 1 μm to 6 μm.
 9. The electronic device of claim 1,wherein the first auxiliary electrode comprises a material selected froma group consisting of Cu, Ag and Au.
 10. The electronic device of claim1, wherein the first auxiliary electrode is formed in a line structure,a mesh structure, or a combination thereof.
 11. The electronic device ofclaim 1, wherein the second auxiliary electrode is electricallyconnected to the first electronic unit and the second electronic unitthrough at least two of the plurality of thin film transistors.
 12. Theelectronic device of claim 1, wherein the first auxiliary electrodeprovides a first voltage, the second auxiliary electrode provides asecond voltage, and the second voltage and the first voltage havedifferent potentials.
 13. The electronic device of claim 1, wherein atleast a portion of the organic layer directly contact the substrate. 14.The electronic device of claim 1, wherein the plurality of electronicunits are light emitting units, antenna units, sensor units, or acombination thereof.
 15. The electronic device of claim 1, furthercomprising a common electrode disposed on the organic layer, wherein thecommon electrode is electrically connected to the plurality ofelectronic units and the first auxiliary electrode.
 16. The electronicdevice of claim 15, further comprising a conductive via disposed in theorganic layer, wherein the conductive via is electrically connected tothe first auxiliary electrode and the common electrode.
 17. Theelectronic device of claim 1, further comprising a connection electrodeelectrically connected with the plurality of electronic units.
 18. Theelectronic device of claim 1, wherein one of the plurality of electronicunits comprises a flip-type LED or a vertical-type LED.
 19. Theelectronic device of claim 1, wherein-part of the first auxiliaryelectrode formed on the substrate is bended.